型号:

IPB04N03LA G

RoHS:无铅 / 符合
制造商:Infineon Technologies描述:MOSFET N-CH 25V 80A TO-263
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IPB04N03LA G PDF
产品变化通告 Product Discontinuation 04/Jun/2009
产品目录绘图 Mosfets TO-263
标准包装 1
系列 OptiMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 25V
电流 - 连续漏极(Id) @ 25° C 80A
开态Rds(最大)@ Id, Vgs @ 25° C 3.9 毫欧 @ 55A,10V
Id 时的 Vgs(th)(最大) 2V @ 60µA
闸电荷(Qg) @ Vgs 32nC @ 5V
输入电容 (Ciss) @ Vds 3877pF @ 15V
功率 - 最大 107W
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 PG-TO263-3
包装 标准包装
其它名称 IPB04N03LAGINDKR
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